 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AO6602 Complementary Enhancement Mode Field Effect Transistor General Description The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6602L is a Green Product ordering option. AO6602 and AO6602L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 3.1A (VGS = 10V) -2.7A (VGS = -10V) RDS(ON) < 75m (VGS = 10V) < 100m(VGS = -10V) < 115m (VGS = 4.5V) < 180m(VGS = -4.5V) D1 TSOP6 Top View G1 S2 G2 16 25 34 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 20 -2.7 -2.1 -12 1.15 0.73 -55 to 150 Units V V A VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG 20 3.1 2.4 12 1.15 0.73 -55 to 150 W C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol RJA RJL Typ 78 106 64 Max 110 150 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO6602 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=3.1A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=3.1A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125C 1 10 54 78 88 4.5 0.79 1 2.5 200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 40 20 2.3 6.5 VGS=10V, VDS=15V, ID=3.1A 3.1 1.2 1.6 3.3 VGS=10V, VDS=15V, RL=4.7, RGEN=3 IF=3.1A, dI/dt=100A/s 2 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 100 1.9 3 75 115 A nA V A m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 240 3 8.5 4 nC nC nC nC ns ns ns ns SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 2.5 13.2 1.7 9.4 3.5 12 Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/s ns nC A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha and Omega Semiconductor, Ltd. AO6602 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J 15 12 9 ID (A) 6 3 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 120 Normalized On-Resistance 110 100 RDS(ON) (m) 90 80 70 60 50 40 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 250 ID=3.1A 1.0E+01 1.0E+00 1.0E-01 RDS(ON) (m) 125C 100 IS (A) 150 1.0E-02 25 1.0E-03 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics VGS=10V VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=2A VGS=10V ID=3.1A 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS(Volts) Figure 2: Transfer Characteristics 10 10V 8V 6V 4.5V 6 ID(A) 4V 3.5V 4 2 125C 25C 5V 8 VDS=5V 200 125 50 0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. AO6602 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J 10 8 VGS (Volts) 6 4 2 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics 400 VDS=15V ID=3.1A Capacitance (pF) 300 Ciss 200 Coss 100 Crss 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C TA=25C 10.0 RDS(ON) limited 10s Power (W) 20 TJ(Max)=150C TA=25C 15 100s 1ms 0.1s 10ms ID (Amps) 10 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha and Omega Semiconductor, Ltd. AO6602 P-Channel Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.7A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-2A Forward Transconductance VDS=-5V, ID=-2.7A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 -5 77 110 130 4.1 -0.81 -1 -2 260 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 55 44 4.3 5.8 VGS=-10V, VDS=-15V, ID=-2.7A 3 0.78 1.6 7 VGS=-10V, VDS=-15V, RL=5.6, RGEN=3 IF=-2.7A, dI/dt=100A/s 6 15 7.5 12.5 5.5 15 5 7 4 312 180 100 -1.9 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10) Total Gate Charge(10V) Qg(4.5) Total Gate Charge(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-2.7A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO6602 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 20 -10V -9V 15 -ID (A) -8V -6V -7V 8 25C -ID(A) -5V 10 VGS=-4.5V 5 -4V -3.5V -3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 200 Normalized On-Resistance 1.6 VGS=-10V ID=-2.7A 0 1 2 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics 2 6 125C 4 10 VDS=-5V RDS(ON) (m) 150 VGS=-4.5V 1.4 1.2 VGS=-4.5V ID=-2A 100 VGS=-10V 1 50 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 250 ID=-2.7A RDS(ON) (m) 200 -IS (A) 125C 150 100 50 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 1.0E-02 125C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C Alpha & Omega Semiconductor, Ltd. AO6602 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) 6 4 2 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics 500 VDS=-15V ID=-2.7A Capacitance (pF) 400 Ciss 300 200 Coss 100 0 0 Crss 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C TA=25C Power (W) -ID (Amps) 10.0 RDS(ON) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 1ms 10s 100s 20 TJ(Max)=150C TA=25C 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
Price & Availability of AO6602
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |